smd zener diode v oltage 2.4 to 39 v olts power 200 mw atts page 1 features -200mw power dissipation. -high v oltages from 2.4 ~ 39 v . -designed for mounting on small surface. -extremely thin/leadless package. -constant voltage control. -pb free product. mechanical data -case: 1005 standard package /sod-323f molded plastic. -t erminals: gold plated, solderable per mil-std-750,method 2026. -polarity: indicated by cathode band. -w eight: 0.006 gram(approx.). op era tin g j un cti on an d s tor ag e t em pe rat ur e r an ge p ar am et er s ym bo l v al ue 0.9 20 0 -55 to +1 25 u ni t v mw fo rw ard cu rre nt , s ur ge pe ak 8.3 m s s ing le ha lf s ine -w av e s up eri mp os ed on ra te loa d( je de c me tho d ) 2.0 a maximum rating and electrical characteristics i fsm p d v f t j o c maximum forward v oltage drop at i f = 10 ma o maximum power dissipation at 25 c 0 . 1 0 2 ( 2 . 6 0 ) 0 . 0 9 5 ( 2 . 4 0 ) 0 . 0 2 0 ( 0 . 5 0 ) t y p . 0 . 0 5 1 ( 1 . 3 0 ) 0 . 0 4 3 ( 1 . 1 0 ) 0 . 0 3 5 ( 0 . 9 0 ) 0 . 0 2 7 ( 0 . 7 0 ) d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r ) 0 . 0 1 2 ( 0 . 3 0 ) t y p . 0 . 0 4 0 ( 1 . 0 0 ) t y p . qw -g2009 rev :a pe ak es d vo lta ge ca pa bil ity (ie c 61 00 0-4 -2) 8 v pv kv czrf2v4b-hf thru czrf39vb-hf comchip t echnology co., l td. 1 0 0 5 / s o d - 3 2 3 f rohs device halogen free
smd zener diode page 2 part num ber m a rk in g cod e min max i z (ma ) max i z (ma ) max i z (ma ) max v r (v) v z (v) zzt( ohm ) zzk (ohm ) ir(u a) zene r v oltag e ope ratin g resi stan ce risi ng oper ating res istan ce rev erse curr ent o electrical characteristics(t a = 25c) c z r f 2 v 4 b -h f c z r f 2 v 7 b -h f c z r f 3 v 0 b -h f c z r f 3 v 3 b -h f c z r f 3 v 6 b -h f c z r f 3 v 9 b -h f c z r f 4 v 3 b -h f c z r f 4 v 7 b -h f c z r f 5 v 1 b -h f c z r f 5 v 6 b -h f c z r f 6 v 2 b -h f c z r f 6 v 8 b -h f c z r f 7 v 5 b -h f c z r f 8 v 2 b -h f c z r f 9 v 1 b -h f c z r f 1 0 v b -h f c z r f 1 1 v b -h f c z r f 1 2 v b -h f c z r f 1 3 v b -h f c z r f 1 5 v b -h f c z r f 1 6 v b -h f c z r f 1 8 v b -h f c z r f 2 0 v b -h f c z r f 2 2 v b -h f c z r f 2 4 v b -h f c z r f 2 7 v b -h f c z r f 3 0 v b -h f c z r f 3 3 v b -h f c z r f 3 6 v b -h f c z r f 3 9 v b -h f u 2 u 3 u 4 u 5 u 6 u 7 u 8 u 9 u a u b u c u e u f u g u h u j u k u m u n u p u q u r u s u t u u u v u w u x u y u z 2 .3 4 2 .6 3 2 .9 3 3 .2 2 3 .5 1 3 .8 0 4 .1 9 4 .5 8 4 .9 7 5 .4 6 6 .0 5 6 .6 3 7 .3 1 8 .0 0 8 .8 7 9 .7 5 1 0 .7 3 1 1 .7 0 1 2 .6 8 1 4 .6 3 1 5 .6 0 1 7 .5 5 1 9 .5 0 2 1 .4 5 2 3 .4 0 2 6 .3 3 2 9 .2 5 3 2 .1 8 3 5 .1 0 3 8 .0 3 2 .4 6 2 .7 7 3 .0 8 3 .3 8 3 .6 9 4 .0 0 4 .4 1 4 .8 2 5 .2 3 5 .7 4 6 .3 6 6 .9 7 7 .6 9 8 .4 1 9 .3 3 1 0 .2 5 1 1 .2 7 1 2 .3 0 1 3 .3 2 1 5 .3 7 1 6 .4 0 1 8 .4 5 2 0 .5 0 2 2 .5 5 2 4 .6 0 2 7 .6 7 3 0 .7 5 3 3 .8 2 3 6 .9 0 3 9 .9 7 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 1 0 0 1 0 0 9 5 9 5 9 0 9 0 8 8 7 0 5 0 2 5 1 0 8 7 7 1 0 1 5 1 8 2 2 2 5 3 2 3 6 4 2 4 8 5 5 6 2 7 0 7 8 8 8 9 5 1 3 0 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 1 8 0 0 1 9 0 0 2 0 0 0 2 2 0 0 2 3 0 0 2 4 0 0 2 5 0 0 2 2 0 0 2 0 5 0 1 8 0 0 1 3 0 0 7 5 0 6 0 0 6 0 0 6 0 0 6 0 0 6 0 0 6 0 0 6 0 0 6 0 0 6 0 0 6 0 0 6 0 0 6 0 0 6 0 0 6 0 0 6 0 0 7 0 0 7 0 0 8 0 0 0 .2 5 0 .2 5 0 .2 5 0 .2 5 0 .2 5 0 .2 5 0 .2 5 0 .2 5 0 .2 5 0 .2 5 0 .2 5 0 .2 5 0 .2 5 0 .2 5 0 .2 5 0 .2 5 0 .2 5 0 .2 5 0 .2 5 0 .2 5 0 .2 5 0 .2 5 0 .2 5 0 .2 5 0 .2 5 0 .2 5 0 .2 5 0 .2 5 0 .2 5 0 .2 5 1 0 0 7 5 5 0 2 5 1 5 1 0 5 3 2 2 1 1 0 .5 0 .5 0 .1 0 .1 0 .1 0 .1 0 .1 0 .1 0 .1 0 .1 0 .1 0 .1 0 .1 0 .1 0 .1 0 .1 0 .1 0 .1 1 1 1 1 1 1 1 1 .5 2 3 4 5 .2 6 6 .5 7 8 .4 9 .1 9 .9 1 1 1 2 1 4 1 5 1 7 1 8 2 1 2 3 2 5 2 7 3 0 8 comchip t echnology co., l td. qw -g2009 rev :a
ra ting and characteristic cur ves (czrf2v4b-hf thru czrf39vb-hf) 1 0 0 m 1 0 m 1 m 1 0 0 1 0 1 1 0 0 n 1 0 n 0 5 1 0 1 5 2 0 2 5 3 0 3 5 4 0 f ig . 1 z e n e r v o lt a g e c h a r a c t e r is t ic s 3 . 6 3 . 9 4 . 3 4 . 7 5 . 1 5 . 6 6 . 2 6 . 8 7 . 5 8 . 2 9 . 1 1 0 1 1 1 2 1 3 1 5 1 6 3 0 2 7 2 4 2 2 2 0 1 8 3 3 3 6 3 0 0 2 0 0 1 0 0 0 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 f ig . 2 d e r a t in g c u r v e zener vol t age:v z (v) 0 . 1 0 i z =5ma 2 1 0 2 0 3 0 0 . 0 8 0 . 0 6 0 . 0 2 0 . 0 0 - 0 . 0 2 - 0 . 0 4 - 0 . 0 6 - 0 . 0 6 - 0 . 0 8 0 . 0 4 p o w e r d i s s i p a t i o n : p d ( m w ) f ig . 3 z e n e r v o lt a g e - t e m p . c o e f f ic ie n t c h a r a c t e r is t ic s z e n e r c u r r e n t : i z ( a ) z e n e r vol t a g e : v z (v ) o ambient tempera ture:t a( c) i z =500 a o t e m p c o e f f i c i e n t c h a r a c t e r i s t i c s ( % / c ) page 3 smd zener diode comchip t echnology co., l td. qw -g2009 rev :a
page 4 smd zener diode i n d e x h o l e o 1 2 0 t railer device leader 10 pitches (min) 10 pitches (min) ....... ....... ....... ....... ....... ....... ....... ....... end start d e f b w a p p 0 p 1 d 1 d 2 d w 1 t c direction of feed b c d d d 2 d 1 e f p p 0 p 1 t s y m b o l a w w 1 reel t aping specification ( m m ) ( i n c h ) 0 . 0 6 1 0 . 0 0 4 0 . 1 0 4 0 . 0 0 4 0 . 0 4 1 0 . 0 0 4 0 . 0 6 1 0 . 0 0 2 7 . 0 0 8 0 . 0 4 2 . 3 6 2 m i n . 0 . 5 1 2 0 . 0 0 8 s y m b o l ( m m ) ( i n c h ) 0 . 0 6 9 0 . 0 0 4 0 . 1 3 8 0 . 0 0 2 0 . 1 5 7 0 . 0 0 4 0 . 1 5 7 0 . 0 0 4 0 . 0 7 9 0 . 0 0 4 0 . 0 0 9 0 . 0 0 2 0 . 3 1 5 0 . 0 0 8 0 . 5 3 1 m a x . polarity 1 . 5 5 0 . 1 0 2 . 6 5 0 . 1 0 4 . 0 0 0 . 1 0 1 . 5 5 0 . 0 5 3 . 5 0 0 . 0 5 1 . 7 5 0 . 1 0 6 0 . 0 m i n . 1 3 . 0 0 . 2 0 1 . 0 5 0 . 1 0 4 . 0 0 0 . 1 0 2 . 0 0 0 . 0 5 0 . 2 3 0 . 0 5 8 . 0 0 0 . 2 0 1 3 . 5 m a x . 1 7 8 1 comchip t echnology co., l td. qw -g2009 rev :a 1 0 0 5 ( s o d - 3 2 3 f ) 1 0 0 5 ( s o d - 3 2 3 f )
page 5 smd zener diode suggested p ad layout size (inch) 0.083 (mm) 2.10 1.20 1.20 0.047 0.047 3.30 0.130 e 0.90 0.035 standard package a b c d a c b e d comchip t echnology co., l td. qw -g2009 rev :a 1 0 0 5 / s o d - 3 2 3 f c a s e t y p e q t y p e r r e e l ( p c s ) 4 0 0 0 1 0 0 5 / s o d - 3 2 3 f r e e l s i z e ( i n c h ) 7
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